Carrier leakage and temperature dependence of InGaAsP lasers

COMPARISON F MEASURED AND CALCULATED CARRIER LIFETIMES FOR InGaAsP LASERS

Selectivephotodissociation of TlCl and TU using248nm ra-INTRODUCTIONd i a t i o n f r o m a ~ F * e x c ~ e r l a s e ~ h a s b e e n u ~ d t o ~ e a t e a T 1 * ( 6 ~‘P;/Z) N this letter we report studies of the T1 anti-stokes R m a nemission at 376 nm has been observed using a532 nm pump laser. OutIlaser in which new methods for creating themetastable state pop...

Direct Measurement of Lateral Carrier Leakage in 1.3- m InGaAsP Multiple-Quantum-Well Capped Mesa Buried Heterostructure Lasers

1.3m InGaAsP multiple-quantum-well (MQW) capped mesa buried heterostructure (CMBH) lasers with mesa widths ranging from 1 m (standard single mode) to 100 m (wide area) were fabricated on one wafer with identical current blocking layers at the sides. The single-mode devices had three times larger nominal threshold current density than the wide-area devices. Measurement of gain and loss in the de...

Two-well terahertz quantum cascade lasers with suppressed carrier leakage

Temperature dependence of long wavelength semiconductor lasers

We compare the temperature dependent characteristics of multiple quantum well semiconductor laser diodes and light emitting diodes operating at a wavelength, /z = 1.3 ,um. No model in which Auger recombination is the dominant temperature sensitive parameter can explain our experimental observations. We suggest that net gain is the appropriate temperature dependent variable which determines lase...

Temperature dependence of carrier lifetimes in InN

Time-resolved pump–probe transmission measurements were used to determine the temperature dependence of carrier lifetime for InN epilayers with unintentionally doped levels from 10 to 10 cm. The observed decay time at 20 K is well explained by a dominating radiative interband recombination, while at room temperature it is attributed to a defect related nonradiative recombination channel. The te...